Ключевое слово: «optoelectronic devices.»
Platonov B. R., Vinokurov P. V., Prokopeva S. I. ELECTRICAL MEASUREMENTS OF 2D MOS2 AND SCHOTTKY BARRIER EVALUATION // Научно-методический электронный журнал «Концепт». – 2026. – . – URL: http://e-koncept.ru/2026/0.htm
B. R. Platonov
In this work, we synthesized and comprehensively studied monolayer molybdenum disulfide (MoS2) obtained by chemical vapor deposition (CVD), with a focus on the characterization of the MoS2/Ag contact. Raman spectroscopy confirmed the formation of uniform, high-quality monolayer structures. Electrical investigations of the MoS2/Ag interface and analysis of the activation energy dependence of conductivity allowed us to determine the Schottky barrier height, which was found to be 0.378 eV. This value indicates the formation of a stable and reproducible contact favorable for electronic applications. The obtained results demonstrate the high potential of the synthesized MoS2, structures for the development of efficient optoelectronic devices such as Schottky diodes and photodetectors.
Ключевые слова:
mos2, cvd synthesis, schottky barrier, electrical measurements, raman spectroscopy, optoelectronic devices.
